FGD3040G2_f085 eco spark ? 2 300mj, 400v, n-channel ignitio n igbt @2012 fair child semiconductor corporation FGD3040G2_f085 rev.c1 www.fairchildsemi.com 1 FGD3040G2_f085 ecospark ? 2 300mj, 400v, n-chan nel igniti on igbt features ? scis energy = 300mj at t j = 25 o c ? logic level gate dr ive ? qualified to aec q101 ? r ohs compliant applications ? automotive lgni tion coil driver circuits ? coil on plug applications package jedec to-25 2 d-pak gate emitter collector april 2012
FGD3040G2_f085 eco spark ? 2 300mj, 400v, n-channel ignitio n igbt @2012 fair child semiconductor corporation FGD3040G2_f085 rev.c1 www.fairchildsemi.com 2 package marking and ordering information electrical ch aracteristics t a = 25 c unless otherwise noted off st at e characteristics on state characteristics symbol parameter ratings unit s bv cer collector to emitter b r eakdown voltage (i c = 1ma) 400 v bv ecs em itter to collector voltage - reverse battery condition (i c = 10 m a) 28 v e scis25 se lf clamping inductive sw itching energy (note 1) 300 mj e scis150 se lf clamping inductive sw itching energy (note 2) 170 mj i c25 collector curren t continuous, at v ge = 5.0v, t c = 25c 41 a i c110 collector c urren t continuous, at v ge = 5.0v , t c = 110c 25. 6 a v gem gate to emitter v oltage continuous 10 v p d power dissip ation total, at t c = 25c 150 w p ower dissipation derating, for t c > 25 o c1 w / o c t j oper ating jun c tion temperature range - 55 to +175 o c t stg stor age junction t emperature range - 55 to +175 o c t l 300 o c t pkg reflow so lder ing according to jesd020c 260 o c esd hbm-elec tr ostatic discharge voltage at100pf, 1500 4k v cdm-electrostatic discharge voltage at 1 2k v device marking device package reel size tape width quantity FGD3040G2 FGD3040G2_f085 to252 330mm 16mm 2500 units symbol parameter test conditions min typ max units bv cer collect or to emitter breakdown voltage i ce = 2ma, v ge = 0, r ge = 1k , t j = -40 to 150 o c 3 70 400 430 v bv ces collect or to emitter breakdown voltage i ce = 10 ma , v ge = 0v , r ge = 0, t j = -40 to 150 o c 3 90 420 450 v bv ecs emitter to collector breakdown volt ag e i ce = -20ma, v ge = 0v, t j = 25c 28 - - v bv ges gate to emitter br eakdown voltage i ges = 2 ma 12 14 - v i cer collect or to emitter le akage current v ce = 250v, r ge = 1k ? t j = 25 o c-- 2 5 a t j = 150 o c- - 1 ma i ecs emitter to collector le akage current v ec = 24v, t j = 25 o c -- 1 ma t j = 150 o c--4 0 r 1 seri es gate resist ance - 120 - r 2 gate to emitter resist ance 10k - 30k v ce(s a t) collector to emitter saturation v olt age i ce = 6a, v ge = 4 v , t j = 2 5 o c - 1 . 1 5 1 . 2 5 v v ce(s a t) collector to emitter saturation v olt age i ce = 10 a , v ge = 4.5v, t j = 150 o c - 1. 35 1.50 v v ce(s a t) collector to emitter saturation v olt age i ce = 15a, v ge = 4 . 5 v, t j = 150 o c - 1. 68 1.85 v e scis self cl amped inductive switching l = 3.0 mhy,r g = 1k ? , v ge = 5v , (note 1) t j = 25c - - 300 mj device maximum ratings t a = 25c unless oth erwise noted max. lead te mp. for soldering (leads at 1.6mm from case for 10s)
FGD3040G2_f085 eco spark ? 2 300mj, 400v, n-channel ignitio n igbt @2012 fair child semiconductor corporation FGD3040G2_f085 rev.c1 www.fairchildsemi.com 3 electrical characteristics t a = 25 c unless otherwise noted dynamic characteristi cs switching characteristics thermal characteristics notes: 1: self clamping induct ive switching energy (e scis25 ) of 300 mj is based on the test conditions that starting tj=25 o c; l= 3mhy, i scis =14.2a ,v cc =100v du ring inductor charging and v cc =0v during the time in clamp . 2: self clamping inductive switching energy (e scis150 ) of 1 70 mj is based on the test conditions that starting tj=150 o c; l=3mhy, i sci s =10.8a,v cc =100v d uring inductor charging and v cc =0v durin g the time in clamp . symbol param eter t est conditions min typ max units q g(on) gate charge i ce = 10 a , v ce = 12v, v ge = 5v -21 - nc v ge(t h) gate to emitter threshold v o ltage i ce = 1m a, v ce = v ge, t j = 25 o c 1.3 1.7 2.2 v t j = 150 o c 0.75 1.2 1.8 v gep gate to emitter plat eau voltage v ce = 12v, i ce = 1 0 a - 2 . 8 - v t d(on)r current t u rn-on delay time-resistive v ce = 14v, r l = 1 v ge = 5v, r g = 1k t j = 25 o c, -0 . 9 4 s t rr current rise t i me-resistive - 1.9 7 s t d(off)l current t u rn-off delay time-inductive v ce = 300v, l = 1mh, v ge = 5v, r g = 1k i ce = 6.5a, t j = 25 o c, - 4.8 15 s t fl current fa ll t ime-inductive - 2.0 15 s r jc thermal resist ance junction to case - - 1 o c/w
FGD3040G2_f085 eco spark ? 2 300mj, 400v, n-channel ignitio n igbt @2012 fair child semiconductor corporation FGD3040G2_f085 rev.c1 www.fairchildsemi.com 4 typical performance curves figu re 1. self clamped inductive switching current vs. time in clamp 1 10 10 0 10 00 1 10 100 sc i s curves valid for v clam p vo lt ages of <430v t j = 150 o c t j = 25 o c t clp , t im e in clamp ( s ) i scis , in du ctive switching current (a) r g = 1k , v ge = 5v, v ce = 100v figure 2. 036912 15 0 5 10 15 20 25 30 35 40 45 sc is curves valid for v cla m p vo lt ages of <430v t j = 150 o c t j = 2 5 o c l, inducta nce (mhy) i sci s , inductiv e sw itching current (a) r g = 1k , v ge = 5 v, v ce = 1 00v self clamped in ductive switching current vs. inductance figure 3. -75 - 5 0 -25 0 25 50 75 100 125 150 175 1.00 1.05 1.10 1.15 1.20 i ce = 6a v ge = 8v v ge = 5v v ge = 4.5v v ge = 4. 0v v ge = 3. 7v v ce , collec t or to emitter voltage (v) t j , juncti on temperture ( o c ) collector to emitte r on-state voltage vs. ju nc tion temperature figure 4. -75 - 50 -25 0 25 50 75 100 125 150 175 1.10 1.15 1.20 1.25 1.30 1.35 1.40 1.45 1.50 i ce = 10 a v ge = 8 v v ge = 5 v v ge = 4.5v v ge = 4. 0v v ge = 3 . 7v v ce , collec t or to emitter voltage (v) t j , j uncti on temperture ( o c ) collector to e m itte r on-state voltage vs. junction temperature figure 5. 0123 4 0 10 20 30 t j = - 4 0 o c v ge = 4. 5v v ge = 5. 0v v ge = 3. 7v v ge = 4. 0 v v ge = 8. 0v v ce , co l lector to emitter voltage (v) i ce , collector to emitter current (a) collector to emitte r on-state voltage vs. collecto r current figure 6. collector to emitter on-state voltage vs. collector current 0123 4 0 10 20 30 t j = 25 o c v ge = 4. 5v v ge = 5. 0v v ge = 3. 7v v ge = 4. 0 v v ge = 8. 0v v ce , co l lector to emitter voltage (v) i ce , collector to emitter current (a)
FGD3040G2_f085 ecospark ? 2 300mj, 400v, n-channel ignition igbt @2012 fairchild semiconductor corporation FGD3040G2_f085 rev.c1 www.fairchildsemi.com 5 figure 7. 01234 0 10 20 30 t j = 175 o c v ge = 4.5v v ge = 5.0v v ge = 3.7v v ge = 4.0v v ge = 8.0v v ce , collector to emitter voltage (v) i ce , collector to emitter current (a) collector to emitte r on-state voltage vs. collector current figure 8. 1.01.52.02.53.03.54.04.5 0 10 20 30 t j = -40 o c t j = 25 o c t j = 175 o c pulse duration = 80 s duty cycle = 0.5% max v ce = 5v i ce , collector to emitter current (a) v ge , gate to emitter voltage (v) transfer characteristics figure 9. 25 50 75 100 125 150 175 0 5 10 15 20 25 30 35 40 45 i ce , dc collector current (a) t c , case temperature( o c) v ge = 5.0v dc collector current vs. case temperature figure 10. gate charge 0 102030405060 0 2 4 6 8 10 i ce = 10a, t j = 25 o c v ce = 6v v gs , gate to emitter voltage(v) q g , gate charge(nc) v ce = 12v figure 11. -50 -25 0 25 50 75 100 125 150 175 1.0 1.2 1.4 1.6 1.8 2.0 v ce = v ge i ce = 1m a v th , threshold voltage (v) t j , junction temperature ( o c ) threshold voltage vs. junction temperature figure 12. leakage current vs. junction tempe rature -50 -25 0 25 50 75 100 125 150 175 0.1 1 10 100 1000 10000 v ces = 250v v ces = 300v v ecs = 24v t j , junction temperature ( o c ) leakage current ( a ) typical performance curves (continued)
FGD3040G2_f085 ecospark ? 2 300mj, 400v, n-channel ignition igbt @2012 fairchild semiconductor corporation FGD3040G2_f085 rev.c1 www.fairchildsemi.com 6 figure 13. 25 50 75 100 125 150 175 0 2 4 6 8 10 12 resistive t on inductive t off resistive t off switching time ( s ) t j , junction temperature ( o c ) i ce = 6.5a, v ge = 5v, r g = 1k switching time vs. junction temperature figure 14. 5 10152025 0 400 800 1200 1600 2000 f = 1mhz v ge = 0v c res c oes c ies v ds , drain to source voltage ( v ) capacitance (pf) capacitance vs. coll ector to emitter voltage figure 15. break down voltage vs. series gate resistance 10 100 1000 6000 380 390 400 410 420 430 t j = 25 o c t j = -40 o c t j = 175 o c i cer = 10ma r g , series gate resistance ( ) bv cer , breakdown voltage (v) figure 16. 10 -5 10 -4 10 -3 10 -2 10 -1 11 0 0.01 0.1 1 2 0.01 0.02 0.05 0.10 single pulse normalized thermal impedance, z jc t, rectangular pulse duration(s) duty cycle - descending order 0.20 d = 0.5 igbt normalized transient thermal impedance, junction to case typical performance curves (continued)
FGD3040G2_f085 ecospark ? 2 300mj, 400v, n-channel ignition igbt @2012 fairch ild semicon ductor corporation FGD3040G2_f085 rev.c1 www.fairchildsemi.com 7 figure 1 7 . forward safe operating area typical performance curves *for s i ngle non repetitive ar d pul v ce , collector to e m itter voltage (v) i ce , colle c tor to emitter current (a) 500 100 10 1 1 10 100 0.1 *for single non repetitive pulse operation tj=175 c tc=25 c vge=5.0v rev. 2.1 operation in this area is limited by vce(on) or transconductance 10us 100us 1ms 10ms dc & 100ms *operation in this area is permitted during scis pulse operation *
test circu i t and waveforms figure 1 8 . inductive switching test circuit figure 19. t on and t off switc h ing test circuit figure 20. energy test circuit figure 21. energy waveforms r g g c e v cc l pul s e gen dut r g = 1 k ? + - v cc dut 5v c g e lo ad r or l t p v ge 0.01 ? l i scis + - v ce v cc r g vary t p to obtain required peak i scis 0v dut g c e v cc v ce bv ces t p i scis t av 0 fg d3040g2_f085 eco spark ? 2 300mj, 400v, n-channel ig nitio n igbt @2012 fair child semiconductor corporation FGD3040G2_f085 rev.c1 www.fairchildsemi.com 8
9 mechanical dimensions 6.60 0.20 2.30 0.10 0.50 0.10 5.34 0.30 0.70 0.20 0.60 0.20 0.80 0.20 9.50 0.30 6.10 0.20 2.70 0.20 9.50 0.30 6.10 0.20 2.70 0.20 min0.55 0.76 0.10 0.50 0.10 1.02 0.20 2.30 0.20 6.60 0.20 0.76 0.10 (5.34) (1.50) (2xr0.25) (5.04) 0.89 0.10 (0.10) (3.05) (1.00) (0.90) (0.70) 0.91 0.10 2.30typ [2.30 0.20] 2.30typ [2.30 0.20] max0.96 (4.34) (0.50) (0.50) d-pak dimensions in millimeters FGD3040G2_f085 ecospark 2 3 00mj, 400v, n-channel ign ition igbt @2012 fairch ild semicon ductor corporation FGD3040G2_f085 rev.c1 www.fairchildsemi.com ?
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